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| The 21st Century COE Program | ||
| Center of Excellence for Research and Education on Complex Functional Mechanical Systems | ||
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| The 21st Century COE Program | ||
| Center of Excellence for Research and Education on Complex Functional Mechanical Systems | ||
| 日時： | 2007年10月26日（金） 13:00〜 |
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| 場所： | 京都大学 工学部物理系校舎 2階 215室 |
| 講演者： | Prof. Torgny Gustafsson (Rutgers University, USA) |
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| 講演題目： | Characterization of ultrathin films using high resolution ion back scattering |
| 講演要旨： | High Resolution Rutherford backscattering, or Medium Energy Ion Scattering, is a novel tool to determine depth profiles of elements on the sub-nanometer scale. I will present some recent data from my laboratory at Rutgers, concerned with characterizing ultrathin films in this way. The systems studied are of relevance for novel electronic materials, specifically high-dielectric constant films, grown on silicon and also on alternate channel materials such as InGaAs. In particular, examples of studies of oxygen diffusion using isotope marking will be given. |
| 講演者： | Dr. Thierry Conard (IMEC, Belgium) |
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| 講演題目： | Physico-chemical characterization of thin oxide films: difficulties and solutions |
| 講演要旨： | Oxides have always been an integral part of semiconductor manufacturing both in front and back-end processing. With the necessary increase in performances, the demand on these oxide has been increasing leading to their (future) replacement by more complex materials, such as high-k’s in gate oxide and low-k’s in interconnects. With the material complexity, a thorough characterization of all aspects of these materials is necessary, covering, for instance, surfaces and interfaces, nucleation, growth, atomic structure, …. This presentation will mainly focus on the characterization of front-end oxides and their interfaces. We will first focus on the determination of substrate surface preparation conditions before deposition ad their influence on growth mode, including the influence of the growth technique (ALD, MOCVD, MBE, …). Second, we will cover the measurement of film thickness and density before covering the difficulties to achieve composition depth profiling with the necessary depth resolution. Finally, we will cover the characterization of electronic properties, such as band-gap and band-offset. |
| 京都大学大学院 | 工学研究科 | 機械理工学専攻 | マイクロエンジニアリング専攻 | 航空宇宙工学専攻 |
| 情報学研究科 | 複雑系科学専攻 | |||
| 京都大学 | 国際融合創造センター | |||
| 拠点リーダー | 椹木哲夫（工学研究科・機械理工学専攻） | |||