| 講演要旨： |
The experimental study of the processes that lead to thin film growth and transformation is based on preparing thin film systems by deposition, growth, annealing, ion bombardment and so on; interrupting their growth atsome particular stage of their evolution, and characterizing theircomposition and structure. The dynamical processes such as diffusion, chemical reactions, and phase transformations that have led to the observed structures are inferred from the variation of the nature of the interrupted growth structures as a function of extrinsic variables: pressure, temperature, time etc. A famous example is the Deal-Grove model for the thermal oxidation kinetics of silicon. A deeper insight into the atomic transport processes involved may be obtained by the use of sequential treatments using substrates or reactants labeled in stable isotopes, combined with isotopically sensitive analytical methods. After an introduction to high depth resolution narrow resonance profiling IBA methodology, I will illustrate the basic approach behind isotopic tracing studies with 18O and 29Si by showing how the Deal and Grove model for the thermal oxidation of silicon is shown to be incomplete. I will present further examples concerning the mechanism of thermal oxidation of SiC and the formation and stability of thin film structures such as capacitors and diffusion barriers used in microelectronics. |
